sd103aw / 103bw / 103cw document number 85681 rev. 1.3,15-mar-05 vishay semiconductors www.vishay.com 1 17431 small signal schottky diodes features ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and cou- pling diodes for fast switching and low logic level applications. other applications are click suppression, efficient full wave bridges in telephone subsets, and block- ing diodes in rechargeable low voltage battery sys- tems. the sd103 series is a metal-on-silic on schottky barrier device which is protected by a pn junction guard ring. this diode is also available in the minimelf case with the type designations ll103a to ll103c, do-35 case with the type designations sd103a to sd103c and sod-323 case with type designa- tions sd103aws to sd103cws. for general purpose applications. lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: sod-123 plastic case weight: approx. 9.3 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code marking remarks sd103aw sd103aw-gs18 or SD103AW-GS08 s6 tape and reel sd103bw sd103bw-gs18 or sd103bw-gs08 s7 tape and reel sd103cw sd103cw-gs18 or sd103cw-gs08 s8 tape and reel parameter test condition part symbol value unit peak reverse voltage sd103aw v rrm 40 v sd103bw v rrm 30 v sd103cw v rrm 20 v power dissipation (infinite heat sink) p tot 400 1) mw single cycle surge 10 s square wave i fsm 2a e3
www.vishay.com 2 document number 85681 rev. 1.3,15-mar-05 sd103aw / 103bw / 103cw vishay semiconductors thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) c/w junction temperature t j 125 1) c storage temperature range t s - 55 to + 150 1) c parameter test condition part symbol min ty p. max unit leakage current v r = 30 v sd103aw i r 5 a v r = 20 v sd103bw i r 5 a v r = 10 v sd103cw i r 5 a forward voltage drop i f = 20 ma v f 0.37 v i f = 200 ma v f 0.6 v diode capacitance v r = 0 v, f = 1 mhz c tot 50 pf reverse recovery time i f = i r = 50 ma to 200 ma, recover to 0.1 i r t rr 10 ns figure 1. typical variation of forward current vs. forward voltage 18488 0.01 1000 100 0.1 1 10 0 0.4 0.6 0.8 1.0 0.2 i - forward current ( ma ) f v f - forward voltag e(v) figure 2.typicaligcurrentforwardconductioncurve 18489 4 5 3 2 0 1 0.5 1.0 0 1.5 i - forward current ( a ) f v f - forward voltag e(v) duty cycl e=2% t p = 300 ms
sd103aw / 103bw / 103cw document number 85681 rev. 1.3,15-mar-05 vishay semiconductors www.vishay.com 3 figure 3. typical variation of reverse current at various temperatures figure 4. typical capacitance vs. reverse voltage figure 5. blocking voltage deration vs. temperature at various average forward currents v r - reverse voltag e(v) i - reverse current ( a) r 18490 100 1000 10 1 0.1 10 20 30 40 050 = 125 c t amb 100 c 75 c 50 c 25 c 18491 10 20 30 40 050 c - typical capacitance ( pf ) t v r - reverse voltag e(v) 100 10 1 t amb - ambient t emperature ( c) 18492 100 200 0 v r - reverse voltag e(v) 30 10 40 20 0 50 = 400 ma i f 100 ma 200 ma
www.vishay.com 4 document number 85681 rev. 1.3,15-mar-05 sd103aw / 103bw / 103cw vishay semiconductors package dimensions in mm (inches) cathode band 17432 0.55 (0.022) 1.70 (0.067) 1.40 (0.055) 3.85 (0.152) 3.55 (0.140) 2.85 (0.112) 2.55 (0.100) 0.1 (0.004) max. 1.35 (0.053) max. 0.25 (0.010) min. 0.15 (0.006) max. 2.40 (0.094) 1.40 (0.055) iso method e mounting pad layout 0.72 (0.028)
sd103aw / 103bw / 103cw document number 85681 rev. 1.3,15-mar-05 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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